Search results for "Reactive sputtering"
showing 5 items of 5 documents
Study of the structural changes induced by air oxidation in Ti–Si–N hard coatings.
2008
International audience; 3-μm thick Ti–Si–N coatings were deposited on polished X38CrMoV5 substrates by sputtering a composite Ti–Si target in Ar–N2 reactive mixture. Oxidation tests were performed in air at 700 °C during 2 h. Whatever the silicon content in the range 0–4 at.%, no silicon containing compound was detected by XRD before air oxidation and only the TiN phase was evidenced. The mean grain size estimated from the full width at half maximum of the TiN (111) diffraction peak was close to 10 nm. As commonly reported for Ti–Si–N films, the hardness showed a maximum at 51 GPa versus the Si content. After oxidation of the TiN film, XRD and micro-Raman analyses revealed the occurrence of…
Structure and chemical bonds in reactively sputtered black Ti–C–N–O thin films
2011
The evolution of the nanoscale structure and the chemical bonds formed in Ti–C–N–O films grown by reactive sputtering were studied as a function of the composition of the reactive atmosphere by increasing the partial pressure of an O2+N2 gas mixture from 0 up to 0.4 Pa, while that of acetylene (carbon source) was constant. The amorphisation of the films observed by transmission electron microscopy was confirmed by micro- Raman spectroscopy, but it was not the only effect associated to the increase of the O2+N2 partial pressure. The chemical environment of titanium and carbon, analysed by X-ray photoemission spectroscopy, also changes due to the higher affinity of Ti towards oxygen and nitro…
High power impulse magnetron sputtering of Zn/Al target in an Ar and Ar/O2 atmosphere: The study of sputtering process and AZO films
2019
Financial support provided by Scientific Research Project for Students and Young Researchers Nr. SJZ/2017/4 realised at the Institute of Solid State Physics, University of Latvia is greatly acknowledged.
Development of dark Ti(C,O,N) coatings prepared by reactive sputtering
2008
Accepted manuscript
Effect of germanium addition on the properties of reactively sputtered ZrN films
2005
For the first time, Zr-Ge-N films were deposited on silicon and steel substrates by sputtering a Zr-Ge composite target in reactive Ar-N2 mixture. The films were characterised by electron probe microanalysis, X-ray diffraction, micro-Raman spectroscopy and depth-sensing indentation. The effects of the Ge content and substrate bias voltage on the films' structure, internal stress, hardness and oxidation resistance were investigated. Substrate bias strongly influenced the chemical composition of the films being observed by means of a steep decrease in the Ge content for negative bias voltages higher than -80 V. In these cases, a significant hardness improvement was registered. For -100 V bias…